atf-34143.mod
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*ATF-34143 packaged FET model
.SUBCKT ATF34143 16 14 15
RR2 2 1 0.1
RR9 4 3 0.1
RR5 1 5 0.1
LL2 5 SOURCE 0.1nH
LL7 SOURCE 7 0.1nH
LL6 SOURCE 8 0.1nH
RR6 8 2 0.1
RR7 7 2 0.1
RR8 DRAIN 9 0.1
LL5 9 11 0.1nH
LL8 2 15 0.05nH
LL10 15 1 0.1nH
LL1 14 4 0.8nH
LL9 11 16 0.6nH
CC3 11 2 0.15e-12
CC4 1 4 0.15e-12
LL4 3 GATE 0.1nH
*CALL DIE MODEL
XDIE DRAIN GATE SOURCE BATF34143
.ENDS
**** GaAs MESFET MODEL PARAMETERS
.SUBCKT ATF34 D G S
.MODEL BATF34143 GASFET ( LEVEL=2, Vto=-0.95, Beta=0.24, Lambda=0.09, Alpha=4,
+ B=0.8, Tnom=27, Vbi=0.7, Delta=0.2, Cgs=0.8 pF,
+ Cgd=0.16 pF, Rd=0.25, Rg=1, Rs=0.125, Cds=0.04 pF,
+ Is=1 nA, P=0.65)
.ENDS
**ATF-34 FET chip Statz model parameters for small signal operation.
*STATZ FET MODEL
* IDS model Gate model Parasitics Breakdown Noise
* NFET=yes Delta1=0.2 Rg=1 Gsfwd=1 Fnc=1E6
* PFET=no Gscap=3 Rd=0.25 Gsrev=0 R=0.17
* Idsmod=3 Cgs=0.8 pF Rs=0.125 Gdfwd=1 C=0.2
* Vto=-0.95 Gdcap=3 Lg=.0075 nH Gdrev=0 P=0.65
* Beta=0.24 Cgd=0.16 pF Ld=.0075 nH Vjr=1
* LAMBDA=0.09 Cds=0.04 pF Ls=.0025 nH
* Alpha=4 Crf=0.1 Is=1 nA
* B=0.8 Rc=125 Ir=1 nA
* Tnom=27 Imax=0.1
* Vbi=0.7