zetec-pmos.lib
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*==============================================
*P-EMOS 3T pinout: D,G,S
*Copyright (c) 1996 MicroCode Engineering, Inc.
*All Rights Reserved
*
*See other copyright notices at end of file.
*==============================================
*PMOS
*Default P-Channel MOSFET parameter values
.MODEL MPMOS~ PMOS()
*IRF9510 MCE 4-2-96
*100V 4A 1.2 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9510 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 .569
RS 30 3 31M
RG 20 2 37.5
CGS 2 3 182P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 231P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=-3 KP=.471)
.MODEL DCGD D (CJO=231P VJ=.6 M=.68)
.MODEL DSUB D (IS=16.6N N=1.5 RS=1.18 BV=100 CJO=327P VJ=.8 M=.42 TT=82N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9510
*IRF9520 MCE 4-2-96
*100V 6.8A .6 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9520 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 .284
RS 30 3 16M
RG 20 2 22
CGS 2 3 345P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 577P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=-3 KP=1.1)
.MODEL DCGD D (CJO=577P VJ=.6 M=.68)
.MODEL DSUB D (IS=28.2N N=1.5 RS=.816 BV=100 CJO=537P VJ=.8 M=.42 TT=98N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9520
*IRF9530
*Harris P-ch. BVdss=100V Ids=12A Rds(on)=.3 ohms: D G S
*HAR 100V 12A .3 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9530 10 20 30 30
M1 4 1 5 5 DMOS L=1U W=1U
RG 20 1 21.4
RD 10 4 .117
RDS 4 5 2.54MEG
CGD 7 4 787P
RCG 7 4 10MEG
MCG 7 9 1 1 SW
ECG 9 1 1 4 1
DGD 6 1 DCGD
MDG 6 8 4 4 SW
EDG 8 4 4 1 1
DDS 4 5 DSUB
LS 5 30 7.5N
.MODEL DMOS PMOS (LEVEL=3 VMAX=6.6MEG THETA=220M VTO=-3.2
+ KP=3.2 RS=8.25M IS=504F CGSO=400U)
.MODEL SW PMOS (LEVEL=3 VTO=0 KP=20)
.MODEL DCGD D (CJO=787P M=.5 VJ=.41)
.MODEL DSUB D (IS=504F RS=.513 BV=100 IBV=.001
+ VJ=.8 M=.4 CJO=802P TT=432N)
.ENDS XIRF9530
*IRF9540 MCE 4-2-96
*100V 19A .2 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9540 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 94M
RS 30 3 6M
RG 20 2 17.6
CGS 2 3 1.26N
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 1.79N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=-3 KP=3.95)
.MODEL DCGD D (CJO=1.79N VJ=.6 M=.68)
.MODEL DSUB D (IS=78.9N N=1.5 RS=.223 BV=100 CJO=1.93N VJ=.8 M=.42 TT=130N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9540
*IRF9610 MCE 4-2-96
*200V 1.8A 3 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9610 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 1.42
RS 30 3 76M
RG 20 2 83.3
CGS 2 3 155P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 192P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=-3 KP=.869)
.MODEL DCGD D (CJO=192P VJ=.6 M=.68)
.MODEL DSUB D (IS=7.47N N=1.5 RS=2.8 BV=200 CJO=150P VJ=.8 M=.42 TT=240N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9610
*IRF9620 MCE 4-2-96
*200V 3.5A 1.5 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9620 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 .711
RS 30 3 38.5M
RG 20 2 42.8
CGS 2 3 320P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 385P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=-3 KP=.643)
.MODEL DCGD D (CJO=385P VJ=.6 M=.68)
.MODEL DSUB D (IS=14.5N N=1.5 RS=1.78 BV=200 CJO=301P VJ=.8 M=.42 TT=300N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9620
*IRF9630 MCE 4-2-96
*200V 6.5A .8 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9630 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 .379
RS 30 3 21M
RG 20 2 23
CGS 2 3 660P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 513P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=-3 KP=1.94)
.MODEL DCGD D (CJO=513P VJ=.6 M=.68)
.MODEL DSUB D (IS=26.9N N=1.5 RS=.885 BV=200 CJO=688P VJ=.8 M=.42 TT=200N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9630
*IRF9640 MCE 4-2-96
*200V 11A .5 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9640 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 .236
RS 30 3 13.5M
RG 20 2 16.3
CGS 2 3 1.11N
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 1.04N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=-3 KP=2.46)
.MODEL DCGD D (CJO=1.04N VJ=.6 M=.68)
.MODEL DSUB D (IS=45.6N N=1.5 RS=.386 BV=200 CJO=1.24N VJ=.8 M=.42 TT=250N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9640
*IRF9Z14 MCE 4-2-96
*60V 6.7A .5 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9Z14 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 .236
RS 30 3 13.5M
RG 20 2 45.6
CGS 2 3 239P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 398P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=-3 KP=.661)
.MODEL DCGD D (CJO=398P VJ=.6 M=.68)
.MODEL DSUB D (IS=27.8N N=1.5 RS=.709 BV=60 CJO=598P VJ=.8 M=.42 TT=80N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9Z14
*IRF9Z24 MCE 4-2-96
*60V 11A .28 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9Z24 10 20 40 40
* TERMINALS: D G S
* 60 Volt 11 Amp .28 ohm P-Channel Power MOSFET 04-02-1996
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 .132
RS 30 3 8M
RG 20 2 13.6
CGS 2 3 505P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 834P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=-3 KP=.4)
.MODEL DCGD D (CJO=834P VJ=.6 M=.68)
.MODEL DSUB D (IS=45.6N N=1.5 RS=.504 BV=60 CJO=1.26N VJ=.8 M=.42 TT=100N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9Z24
*IRF9Z34 MCE 4-2-96
*60V 18A .14 ohms HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF9Z34 10 20 40 40
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 65.5M
RS 30 3 4.5M
RG 20 2 24.5
CGS 2 3 1N
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 1.28N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=-3 KP=4.27)
.MODEL DCGD D (CJO=1.28N VJ=.6 M=.68)
.MODEL DSUB D (IS=74.7N N=1.5 RS=.308 BV=60 CJO=2.23N VJ=.8 M=.42 TT=100N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF9Z34
*ZVP2106 ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 3/86
*ZTX 60V 280mA pkg:TO-92
.SUBCKT XZVP2106 3 4 5 5
M1 3 2 5 5 P2106 L=1 W=1
RG 4 2 160
RL 3 5 1.2E8
D1 3 5 DP2106
.MODEL P2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277
+CGSO=47E-12 CGDO=10E-12 CBD=105E-12 PB=1 LAMBDA=1.2E-2
.MODEL DP2106 D IS=2E-13 RS=0.309
.ENDS XZVP2106
*ZVP2106G ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 3/86
*ZTX 60V 450mA pkg:SOT-223
.SUBCKT XZVP2106G 3 4 5 5
M1 3 2 5 5 P2106 L=1 W=1
RG 4 2 160
RL 3 5 1.2E8
D1 3 5 DP2106
.MODEL P2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277
+CGSO=47E-12 CGDO=10E-12 CBD=105E-12 PB=1 LAMBDA=1.2E-2
.MODEL DP2106 D IS=2E-13 RS=0.309
.ENDS XZVP2106G
*ZVP3306 ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 12/85
*ZTX 60V 160mA pkg:TO-92
.SUBCKT XZVP3306 3 4 5 5
M1 3 2 5 5 P3306M L=1 W=1
RG 4 2 252
RL 3 5 1.2E8
D1 3 5 P3306D
.MODEL P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 KP=.145
+CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1 LAMBDA=6.67E-3
.MODEL P3306D D IS=5E-12 RS=.768
.ENDS XZVP3306
* Copyright notice for all models labeled "ZETEX":
*
* (C) 1992 ZETEX PLC
*
* The copyright in these models and the designs embodied belong
* to Zetex PLC ("Zetex"). They are supplied free of charge by
* Zetex for the purpose of research and design and may be used or
* copied intact (including this notice) for that purpose only.
* All other rights are reserved. The models are believed accurate
* but no condition or warranty as to their merchantability or
* fitness for purpose is given and no liability in respect of any
* use is accepted by Zetex PLC, its distributors or agents.
*
*
* Zetex PLC, Fields New Road, Chadderton, Oldham OL9 8NP U.K.