*======================
*Diode Pinout: 1=A, 2=K
*======================

*DIODE MCE
*Default diode parameter values pkg:DO-41 1,2
.MODEL DDIODE~ D()

*1N34 MCE
* 60V 85mA 100ns Ge Signal Diode pkg:DO-41 1,2
.MODEL D1N34 D(IS=200P RS=84M N=2.19 BV=60 IBV=15U
+ CJO=4.82P VJ=.75 M=.333 TT=144N)

*1N914 MCE
*100V 80mA 4ns Si Switching Diode pkg:DO-7 1,2
.MODEL D1N914 D(IS=7.075E-9 RS=0.78 N=1.95 TT=7.2E-9 CJO=4E-12 VJ=0.657 
+ M=0.4 BV=100 IBV=0.0001 )

*1N4001 MCE General Purpose Diode 8-16-95
* 50V  1 A  4us  Si Diode pkg:DO-41 1,2
.MODEL D1N4001 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=50 IBV=1E-5 )

*1N4002 MCE General Purpose Diode 8-16-95
*100V  1 A  4us  Si Diode pkg:DO-41 1,2
.MODEL D1N4002 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=100 IBV=1E-5 )

*1N4003 MCE General Purpose Diode 8-16-95
*200V  1 A  4us  Si Diode pkg:DO-41 1,2
.MODEL D1N4003 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=200 IBV=1.98E-5 )

*1N4004 MCE General Purpose Diode 8-16-95
*400V  1 A  4us  Si Diode pkg:DO-41 1,2
.MODEL D1N4004 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=400 IBV=3.95E-5 )

*1N4005 MCE General Purpose Diode 8-16-95
*600V  1 A  4us  Si Diode pkg:DO-41 1,2
.MODEL D1N4005 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=600 IBV=5.92E-5 )

*1N4006 MCE General Purpose Diode 8-16-95
*800V  1 A  4us  Si Diode pkg:DO-41 1,2
.MODEL D1N4006 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=800 IBV=7.89E-5 )

*1N4007 MCE General Purpose Diode 8-16-95
*1000V 1 A  4us  Si Diode pkg:DO-41 1,2
.MODEL D1N4007 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=1000 IBV=9.86E-5 )

*1N4934 MCE
*400V 1A 30us Si Rectifier pkg:DO-41 1,2
.MODEL D1N4934 D(IS=2.54E-10 RS=6.874E-6 N=1.498 TT=1.086E-8 CJO=3.135E-11 
+ VJ=0.5581 M=0.4379 BV=100 IBV=0.0001 )

*1N5400 MCE
* 50V 3A 15us Si Rectifier pkg:DO-201 1,2
.MODEL D1N5400 D(IS=2.68E-12 RS=0.00977 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=66.6 IBV=1E-5 )

*1N5401 MCE
*100V 3A 15us Si Rectifier pkg:DO-201 1,2
.MODEL D1N5401 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=133.2 IBV=1E-5 )

*1N5402 MCE
*200V 3A 15us Si Rectifier pkg:DO-201 1,2
.MODEL D1N5402 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=266 IBV=1E-5 )

*1N5404 MCE
*400V 3A 15us Si Rectifier pkg:DO-201 1,2
.MODEL D1N5404 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=533 IBV=1E-5 )

*1N5406 MCE
*600V 3A 15us Si Rectifier pkg:DO-201 1,2
.MODEL D1N5406 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=900 IBV=1E-5 )

*BAS116 MCE 2-27-96
* 75V 200mA 3us Si Switching Diode pkg:SOT-23 3,1
.MODEL DBAS116 D (IS=473P RS=42M N=1.75 BV=75 IBV=1.38U
+ CJO=9.55P VJ=.75 M=.333 TT=4.32U)

*MAD1108 MCE 2-27-96
* 50V 400mA 8ns 8-Diode Array pkg:DIP16 (A:16,1)(B:15,2)(C:14,3)(D:13,4)(E:12,5)(F:11,6)(G:10,7)(H:9,8)
.MODEL DMAD1108 D (IS=210N RS=.201 N=2.51 BV=50 IBV=406U
+ CJO=17.7P VJ=.75 M=.333 TT=11.5N)

*MAD1109 MCE 2-27-96
* 50V 400mA 8ns 7-Diode Array pkg:DIP14 (A:14,1)(B:13,2)(C:12,3)(D:11,4)(E:10,5)(F:9,6)(G:8,7)
.MODEL DMAD1109 D (IS=210N RS=.201 N=2.51 BV=50 IBV=406U
+ CJO=17.7P VJ=.75 M=.333 TT=11.5N)

*MMAD1108 MCE 2-27-96
* 50V 400mA 8ns 8-Diode Array pkg:SO-16 (A:16,1)(B:15,2)(C:14,3)(D:13,4)(E:12,5)(F:11,6)(G:10,7)(H:9,8)
.MODEL DMMAD1108 D (IS=210N RS=.201 N=2.51 BV=50 IBV=406U
+ CJO=17.7P VJ=.75 M=.333 TT=11.5N)

*MMAD1109 MCE 2-27-96
* 50V 400mA 8ns 7-Diode Array pkg:DIP14 (A:14,1)(B:13,2)(C:12,3)(D:11,4)(E:10,5)(F:9,6)(G:8,7)
.MODEL DMMAD1109 D (IS=210N RS=.201 N=2.51 BV=50 IBV=406U
+ CJO=17.7P VJ=.75 M=.333 TT=11.5N)

*MMBD6050 MCE 2-27-96
* 70V 200mA 4ns Si Switching Diode pkg:SOT-23 3,1
.MODEL DMMBD6050 D (IS=24.2N RS=42M N=2.18 BV=70 IBV=66U
+ CJO=760F VJ=.75 M=.333 TT=5.76N)

*MMBD914 MCE
*100V  200mA  4ns  Si Diode pkg:SOT-23 3,1
.MODEL DMMBD914 D(IS=3.45E-8 RS=0.042 N=2.18 TT=5.76E-9 CJO=7.62E-13 
+ VJ=0.75 M=0.333 BV=100 IBV=0.0001334 )

*BAL74  ZETEX Spice Model        Last revision 24/8/92
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND 
* PARALLEL CAPACITANCE OF 0.95E-12F.
*ZTX 50V 100mA 4ns Si High Speed Switching pkg:SOT-23 2,1
.MODEL DBAL74 D(IS=4.739E-9 RS=0.4418 N=1.849 TT=2.02E-9 BV=99.08 
+ IBV=0.02588 )

*BAL99  ZETEX Spice Model        Last revision 21/8/92
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND 
* PARALLEL CAPACITANCE OF 0.51E-12F.
*ZTX 70V 100mA 6ns Si High Speed Switching pkg:SOT-23 1,2
.MODEL DBAL99 D(IS=4.858E-9 RS=1.898 N=2.038 TT=4.184E-9 BV=164.1 
+ IBV=0.01294 )

*BAR74 ZETEX Spice Model        Last revision 24/8/92
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND 
* PARALLEL CAPACITANCE OF 0.95E-12F.
*ZTX 50V 150mA 4ns Si High Speed Switching pkg:SOT-23 2,1
.MODEL DBAR74 D(IS=4.739E-9 RS=0.4418 N=1.849 TT=2.02E-9 BV=99.08 
+ IBV=0.02588 )

*BAR99  ZETEX Spice Model        Last revision 21/8/92
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND 
* PARALLEL CAPACITANCE OF 0.51E-12F.
*ZTX 70V 100mA 6ns Si High Speed Switching pkg:SOT-23 1,2
.MODEL DBAR99 D(IS=4.858E-9 RS=1.898 N=2.038 TT=4.184E-9 BV=164.1 
+ IBV=0.01294 )

*BAS16 ZETEX Spice Model        Last revision 24/8/92
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND 
* PARALLEL CAPACITANCE OF 0.555E-12F.
*ZTX 75V 100mA 6ns Si High Speed Switching pkg:SOT-23 3,1
.MODEL DBAS16 D(IS=1.795E-9 RS=1.263 N=1.874 TT=7.358E-9 BV=153.1 
+ IBV=0.01726 )

*BAS19  ZETEX Spice Model        Last revision 21/8/92
*NOTE: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND
* PARALLEL CAPACITANCE OF 0.55E-12F. 
*ZTX 100V 200mA 50ns Si High Speed Switching pkg:SOT-23 3,1
.MODEL DBAS19 D(IS=8.402E-9 RS=0.5125 N=2.011 TT=4.184E-8 BV=435 
+ IBV=0.004139 )

*BAS20  ZETEX Spice Model        Last revision 21/8/92
*NOTE: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND
* PARALLEL CAPACITANCE OF 0.55E-12F. 
*ZTX 150V 200mA 50ns Si High Speed Switching pkg:SOT-23 3,1
.MODEL DBAS20 D(IS=8.402E-9 RS=0.5125 N=2.011 TT=4.184E-8 BV=435 
+ IBV=0.004139 )

*BAS21  ZETEX Spice Model        Last revision 21/8/92
*NOTE: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND
* PARALLEL CAPACITANCE OF 0.55E-12F. 
*ZTX 200V 200mA 50ns Si High Speed Switching pkg:SOT-23 3,1
.MODEL DBAS21 D(IS=8.402E-9 RS=0.5125 N=2.011 TT=4.184E-8 BV=435 
+ IBV=0.004139 )

*FMMD6050 ZETEX Spice Model        Last revision 24/8/92
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND 
* PARALLEL CAPACITANCE OF 0.555E-12F.
*ZTX 70V 200mA 10ns Si High Speed Switching pkg:SOT-23 3,1
.MODEL DFMMD6050 D IS=1.795E-9 N=1.874 RS=1.263 XTI=3 
+ EG=1.11 BV=153.1 IBV=17.26E-3 TT=7.358E-9

*FMMD914  ZETEX Spice Model        Last revision 21/8/92
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND 
* PARALLEL CAPACITANCE OF 0.51E-12F.
*ZTX 75V 75mA 8ns Si High Speed Switching pkg:SOT-23 3,1
.MODEL DFMMD914 D(IS=4.858E-9 RS=1.898 N=2.038 TT=4.184E-9 BV=164.1 
+ IBV=0.01294 )

*HD3A  ZETEX Spice Model        Last revision 21/8/92
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND 
* PARALLEL CAPACITANCE OF 0.51E-12F.
*ZTX 75V 100mA 6ns Si High Speed Switching pkg:SOT-23 3,1
.MODEL DHD3A D(IS=4.858E-9 RS=1.898 N=2.038 TT=4.184E-9 BV=164.1 
+ IBV=0.01294 )

*   Copyright notice for all models labeled "ZETEX":
*
*                          (C)  1992 ZETEX PLC
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex PLC ("Zetex").  They  are  supplied  free of charge by
*   Zetex for the purpose of research and design and may be used or
*   copied intact  (including this notice)  for  that purpose only.
*   All other rights are reserved. The models are believed accurate
*   but  no condition  or warranty  as to their  merchantability or
*   fitness for purpose is given and no liability in respect of any
*   use is accepted by Zetex PLC, its distributors or agents.
*
*
*   Zetex PLC, Fields New Road, Chadderton, Oldham  OL9 8NP  U.K.