*====================== *Diode Pinout: 1=A, 2=K *====================== *DIODE MCE *Default diode parameter values pkg:DO-41 1,2 .MODEL DDIODE~ D() *1N34 MCE * 60V 85mA 100ns Ge Signal Diode pkg:DO-41 1,2 .MODEL D1N34 D(IS=200P RS=84M N=2.19 BV=60 IBV=15U + CJO=4.82P VJ=.75 M=.333 TT=144N) *1N914 MCE *100V 80mA 4ns Si Switching Diode pkg:DO-7 1,2 .MODEL D1N914 D(IS=7.075E-9 RS=0.78 N=1.95 TT=7.2E-9 CJO=4E-12 VJ=0.657 + M=0.4 BV=100 IBV=0.0001 ) *1N4001 MCE General Purpose Diode 8-16-95 * 50V 1 A 4us Si Diode pkg:DO-41 1,2 .MODEL D1N4001 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 + VJ=0.75 M=0.333 BV=50 IBV=1E-5 ) *1N4002 MCE General Purpose Diode 8-16-95 *100V 1 A 4us Si Diode pkg:DO-41 1,2 .MODEL D1N4002 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 + VJ=0.75 M=0.333 BV=100 IBV=1E-5 ) *1N4003 MCE General Purpose Diode 8-16-95 *200V 1 A 4us Si Diode pkg:DO-41 1,2 .MODEL D1N4003 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 + VJ=0.75 M=0.333 BV=200 IBV=1.98E-5 ) *1N4004 MCE General Purpose Diode 8-16-95 *400V 1 A 4us Si Diode pkg:DO-41 1,2 .MODEL D1N4004 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 + VJ=0.75 M=0.333 BV=400 IBV=3.95E-5 ) *1N4005 MCE General Purpose Diode 8-16-95 *600V 1 A 4us Si Diode pkg:DO-41 1,2 .MODEL D1N4005 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 + VJ=0.75 M=0.333 BV=600 IBV=5.92E-5 ) *1N4006 MCE General Purpose Diode 8-16-95 *800V 1 A 4us Si Diode pkg:DO-41 1,2 .MODEL D1N4006 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 + VJ=0.75 M=0.333 BV=800 IBV=7.89E-5 ) *1N4007 MCE General Purpose Diode 8-16-95 *1000V 1 A 4us Si Diode pkg:DO-41 1,2 .MODEL D1N4007 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 + VJ=0.75 M=0.333 BV=1000 IBV=9.86E-5 ) *1N4934 MCE *400V 1A 30us Si Rectifier pkg:DO-41 1,2 .MODEL D1N4934 D(IS=2.54E-10 RS=6.874E-6 N=1.498 TT=1.086E-8 CJO=3.135E-11 + VJ=0.5581 M=0.4379 BV=100 IBV=0.0001 ) *1N5400 MCE * 50V 3A 15us Si Rectifier pkg:DO-201 1,2 .MODEL D1N5400 D(IS=2.68E-12 RS=0.00977 N=1.17 TT=1.44E-5 CJO=1.24E-10 + VJ=0.6 M=0.333 BV=66.6 IBV=1E-5 ) *1N5401 MCE *100V 3A 15us Si Rectifier pkg:DO-201 1,2 .MODEL D1N5401 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 + VJ=0.6 M=0.333 BV=133.2 IBV=1E-5 ) *1N5402 MCE *200V 3A 15us Si Rectifier pkg:DO-201 1,2 .MODEL D1N5402 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 + VJ=0.6 M=0.333 BV=266 IBV=1E-5 ) *1N5404 MCE *400V 3A 15us Si Rectifier pkg:DO-201 1,2 .MODEL D1N5404 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 + VJ=0.6 M=0.333 BV=533 IBV=1E-5 ) *1N5406 MCE *600V 3A 15us Si Rectifier pkg:DO-201 1,2 .MODEL D1N5406 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 + VJ=0.6 M=0.333 BV=900 IBV=1E-5 ) *BAS116 MCE 2-27-96 * 75V 200mA 3us Si Switching Diode pkg:SOT-23 3,1 .MODEL DBAS116 D (IS=473P RS=42M N=1.75 BV=75 IBV=1.38U + CJO=9.55P VJ=.75 M=.333 TT=4.32U) *MAD1108 MCE 2-27-96 * 50V 400mA 8ns 8-Diode Array pkg:DIP16 (A:16,1)(B:15,2)(C:14,3)(D:13,4)(E:12,5)(F:11,6)(G:10,7)(H:9,8) .MODEL DMAD1108 D (IS=210N RS=.201 N=2.51 BV=50 IBV=406U + CJO=17.7P VJ=.75 M=.333 TT=11.5N) *MAD1109 MCE 2-27-96 * 50V 400mA 8ns 7-Diode Array pkg:DIP14 (A:14,1)(B:13,2)(C:12,3)(D:11,4)(E:10,5)(F:9,6)(G:8,7) .MODEL DMAD1109 D (IS=210N RS=.201 N=2.51 BV=50 IBV=406U + CJO=17.7P VJ=.75 M=.333 TT=11.5N) *MMAD1108 MCE 2-27-96 * 50V 400mA 8ns 8-Diode Array pkg:SO-16 (A:16,1)(B:15,2)(C:14,3)(D:13,4)(E:12,5)(F:11,6)(G:10,7)(H:9,8) .MODEL DMMAD1108 D (IS=210N RS=.201 N=2.51 BV=50 IBV=406U + CJO=17.7P VJ=.75 M=.333 TT=11.5N) *MMAD1109 MCE 2-27-96 * 50V 400mA 8ns 7-Diode Array pkg:DIP14 (A:14,1)(B:13,2)(C:12,3)(D:11,4)(E:10,5)(F:9,6)(G:8,7) .MODEL DMMAD1109 D (IS=210N RS=.201 N=2.51 BV=50 IBV=406U + CJO=17.7P VJ=.75 M=.333 TT=11.5N) *MMBD6050 MCE 2-27-96 * 70V 200mA 4ns Si Switching Diode pkg:SOT-23 3,1 .MODEL DMMBD6050 D (IS=24.2N RS=42M N=2.18 BV=70 IBV=66U + CJO=760F VJ=.75 M=.333 TT=5.76N) *MMBD914 MCE *100V 200mA 4ns Si Diode pkg:SOT-23 3,1 .MODEL DMMBD914 D(IS=3.45E-8 RS=0.042 N=2.18 TT=5.76E-9 CJO=7.62E-13 + VJ=0.75 M=0.333 BV=100 IBV=0.0001334 ) *BAL74 ZETEX Spice Model Last revision 24/8/92 *NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.95E-12F. *ZTX 50V 100mA 4ns Si High Speed Switching pkg:SOT-23 2,1 .MODEL DBAL74 D(IS=4.739E-9 RS=0.4418 N=1.849 TT=2.02E-9 BV=99.08 + IBV=0.02588 ) *BAL99 ZETEX Spice Model Last revision 21/8/92 *NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.51E-12F. *ZTX 70V 100mA 6ns Si High Speed Switching pkg:SOT-23 1,2 .MODEL DBAL99 D(IS=4.858E-9 RS=1.898 N=2.038 TT=4.184E-9 BV=164.1 + IBV=0.01294 ) *BAR74 ZETEX Spice Model Last revision 24/8/92 *NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.95E-12F. *ZTX 50V 150mA 4ns Si High Speed Switching pkg:SOT-23 2,1 .MODEL DBAR74 D(IS=4.739E-9 RS=0.4418 N=1.849 TT=2.02E-9 BV=99.08 + IBV=0.02588 ) *BAR99 ZETEX Spice Model Last revision 21/8/92 *NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.51E-12F. *ZTX 70V 100mA 6ns Si High Speed Switching pkg:SOT-23 1,2 .MODEL DBAR99 D(IS=4.858E-9 RS=1.898 N=2.038 TT=4.184E-9 BV=164.1 + IBV=0.01294 ) *BAS16 ZETEX Spice Model Last revision 24/8/92 *NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.555E-12F. *ZTX 75V 100mA 6ns Si High Speed Switching pkg:SOT-23 3,1 .MODEL DBAS16 D(IS=1.795E-9 RS=1.263 N=1.874 TT=7.358E-9 BV=153.1 + IBV=0.01726 ) *BAS19 ZETEX Spice Model Last revision 21/8/92 *NOTE: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.55E-12F. *ZTX 100V 200mA 50ns Si High Speed Switching pkg:SOT-23 3,1 .MODEL DBAS19 D(IS=8.402E-9 RS=0.5125 N=2.011 TT=4.184E-8 BV=435 + IBV=0.004139 ) *BAS20 ZETEX Spice Model Last revision 21/8/92 *NOTE: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.55E-12F. *ZTX 150V 200mA 50ns Si High Speed Switching pkg:SOT-23 3,1 .MODEL DBAS20 D(IS=8.402E-9 RS=0.5125 N=2.011 TT=4.184E-8 BV=435 + IBV=0.004139 ) *BAS21 ZETEX Spice Model Last revision 21/8/92 *NOTE: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.55E-12F. *ZTX 200V 200mA 50ns Si High Speed Switching pkg:SOT-23 3,1 .MODEL DBAS21 D(IS=8.402E-9 RS=0.5125 N=2.011 TT=4.184E-8 BV=435 + IBV=0.004139 ) *FMMD6050 ZETEX Spice Model Last revision 24/8/92 *NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.555E-12F. *ZTX 70V 200mA 10ns Si High Speed Switching pkg:SOT-23 3,1 .MODEL DFMMD6050 D IS=1.795E-9 N=1.874 RS=1.263 XTI=3 + EG=1.11 BV=153.1 IBV=17.26E-3 TT=7.358E-9 *FMMD914 ZETEX Spice Model Last revision 21/8/92 *NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.51E-12F. *ZTX 75V 75mA 8ns Si High Speed Switching pkg:SOT-23 3,1 .MODEL DFMMD914 D(IS=4.858E-9 RS=1.898 N=2.038 TT=4.184E-9 BV=164.1 + IBV=0.01294 ) *HD3A ZETEX Spice Model Last revision 21/8/92 *NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND * PARALLEL CAPACITANCE OF 0.51E-12F. *ZTX 75V 100mA 6ns Si High Speed Switching pkg:SOT-23 3,1 .MODEL DHD3A D(IS=4.858E-9 RS=1.898 N=2.038 TT=4.184E-9 BV=164.1 + IBV=0.01294 ) * Copyright notice for all models labeled "ZETEX": * * (C) 1992 ZETEX PLC * * The copyright in these models and the designs embodied belong * to Zetex PLC ("Zetex"). They are supplied free of charge by * Zetex for the purpose of research and design and may be used or * copied intact (including this notice) for that purpose only. * All other rights are reserved. The models are believed accurate * but no condition or warranty as to their merchantability or * fitness for purpose is given and no liability in respect of any * use is accepted by Zetex PLC, its distributors or agents. * * * Zetex PLC, Fields New Road, Chadderton, Oldham OL9 8NP U.K.