*============================================== *P-EMOS 3T pinout: D,G,S *Copyright (c) 1996 MicroCode Engineering, Inc. *All Rights Reserved * *See other copyright notices at end of file. *============================================== *PMOS *Default P-Channel MOSFET parameter values .MODEL MPMOS~ PMOS() *IRF9510 MCE 4-2-96 *100V 4A 1.2 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9510 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .569 RS 30 3 31M RG 20 2 37.5 CGS 2 3 182P EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 231P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=-3 KP=.471) .MODEL DCGD D (CJO=231P VJ=.6 M=.68) .MODEL DSUB D (IS=16.6N N=1.5 RS=1.18 BV=100 CJO=327P VJ=.8 M=.42 TT=82N) .MODEL DLIM D (IS=100U) .ENDS XIRF9510 *IRF9520 MCE 4-2-96 *100V 6.8A .6 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9520 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .284 RS 30 3 16M RG 20 2 22 CGS 2 3 345P EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 577P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=-3 KP=1.1) .MODEL DCGD D (CJO=577P VJ=.6 M=.68) .MODEL DSUB D (IS=28.2N N=1.5 RS=.816 BV=100 CJO=537P VJ=.8 M=.42 TT=98N) .MODEL DLIM D (IS=100U) .ENDS XIRF9520 *IRF9530 *Harris P-ch. BVdss=100V Ids=12A Rds(on)=.3 ohms: D G S *HAR 100V 12A .3 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9530 10 20 30 30 M1 4 1 5 5 DMOS L=1U W=1U RG 20 1 21.4 RD 10 4 .117 RDS 4 5 2.54MEG CGD 7 4 787P RCG 7 4 10MEG MCG 7 9 1 1 SW ECG 9 1 1 4 1 DGD 6 1 DCGD MDG 6 8 4 4 SW EDG 8 4 4 1 1 DDS 4 5 DSUB LS 5 30 7.5N .MODEL DMOS PMOS (LEVEL=3 VMAX=6.6MEG THETA=220M VTO=-3.2 + KP=3.2 RS=8.25M IS=504F CGSO=400U) .MODEL SW PMOS (LEVEL=3 VTO=0 KP=20) .MODEL DCGD D (CJO=787P M=.5 VJ=.41) .MODEL DSUB D (IS=504F RS=.513 BV=100 IBV=.001 + VJ=.8 M=.4 CJO=802P TT=432N) .ENDS XIRF9530 *IRF9540 MCE 4-2-96 *100V 19A .2 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9540 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 94M RS 30 3 6M RG 20 2 17.6 CGS 2 3 1.26N EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.79N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=-3 KP=3.95) .MODEL DCGD D (CJO=1.79N VJ=.6 M=.68) .MODEL DSUB D (IS=78.9N N=1.5 RS=.223 BV=100 CJO=1.93N VJ=.8 M=.42 TT=130N) .MODEL DLIM D (IS=100U) .ENDS XIRF9540 *IRF9610 MCE 4-2-96 *200V 1.8A 3 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9610 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 1.42 RS 30 3 76M RG 20 2 83.3 CGS 2 3 155P EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 192P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=-3 KP=.869) .MODEL DCGD D (CJO=192P VJ=.6 M=.68) .MODEL DSUB D (IS=7.47N N=1.5 RS=2.8 BV=200 CJO=150P VJ=.8 M=.42 TT=240N) .MODEL DLIM D (IS=100U) .ENDS XIRF9610 *IRF9620 MCE 4-2-96 *200V 3.5A 1.5 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9620 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .711 RS 30 3 38.5M RG 20 2 42.8 CGS 2 3 320P EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 385P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=-3 KP=.643) .MODEL DCGD D (CJO=385P VJ=.6 M=.68) .MODEL DSUB D (IS=14.5N N=1.5 RS=1.78 BV=200 CJO=301P VJ=.8 M=.42 TT=300N) .MODEL DLIM D (IS=100U) .ENDS XIRF9620 *IRF9630 MCE 4-2-96 *200V 6.5A .8 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9630 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .379 RS 30 3 21M RG 20 2 23 CGS 2 3 660P EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 513P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=-3 KP=1.94) .MODEL DCGD D (CJO=513P VJ=.6 M=.68) .MODEL DSUB D (IS=26.9N N=1.5 RS=.885 BV=200 CJO=688P VJ=.8 M=.42 TT=200N) .MODEL DLIM D (IS=100U) .ENDS XIRF9630 *IRF9640 MCE 4-2-96 *200V 11A .5 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9640 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .236 RS 30 3 13.5M RG 20 2 16.3 CGS 2 3 1.11N EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.04N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=-3 KP=2.46) .MODEL DCGD D (CJO=1.04N VJ=.6 M=.68) .MODEL DSUB D (IS=45.6N N=1.5 RS=.386 BV=200 CJO=1.24N VJ=.8 M=.42 TT=250N) .MODEL DLIM D (IS=100U) .ENDS XIRF9640 *IRF9Z14 MCE 4-2-96 *60V 6.7A .5 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9Z14 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .236 RS 30 3 13.5M RG 20 2 45.6 CGS 2 3 239P EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 398P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=-3 KP=.661) .MODEL DCGD D (CJO=398P VJ=.6 M=.68) .MODEL DSUB D (IS=27.8N N=1.5 RS=.709 BV=60 CJO=598P VJ=.8 M=.42 TT=80N) .MODEL DLIM D (IS=100U) .ENDS XIRF9Z14 *IRF9Z24 MCE 4-2-96 *60V 11A .28 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9Z24 10 20 40 40 * TERMINALS: D G S * 60 Volt 11 Amp .28 ohm P-Channel Power MOSFET 04-02-1996 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .132 RS 30 3 8M RG 20 2 13.6 CGS 2 3 505P EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 834P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=-3 KP=.4) .MODEL DCGD D (CJO=834P VJ=.6 M=.68) .MODEL DSUB D (IS=45.6N N=1.5 RS=.504 BV=60 CJO=1.26N VJ=.8 M=.42 TT=100N) .MODEL DLIM D (IS=100U) .ENDS XIRF9Z24 *IRF9Z34 MCE 4-2-96 *60V 18A .14 ohms HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF9Z34 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 65.5M RS 30 3 4.5M RG 20 2 24.5 CGS 2 3 1N EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.28N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=-3 KP=4.27) .MODEL DCGD D (CJO=1.28N VJ=.6 M=.68) .MODEL DSUB D (IS=74.7N N=1.5 RS=.308 BV=60 CJO=2.23N VJ=.8 M=.42 TT=100N) .MODEL DLIM D (IS=100U) .ENDS XIRF9Z34 *ZVP2106 ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 3/86 *ZTX 60V 280mA pkg:TO-92 .SUBCKT XZVP2106 3 4 5 5 M1 3 2 5 5 P2106 L=1 W=1 RG 4 2 160 RL 3 5 1.2E8 D1 3 5 DP2106 .MODEL P2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CGSO=47E-12 CGDO=10E-12 CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DP2106 D IS=2E-13 RS=0.309 .ENDS XZVP2106 *ZVP2106G ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 3/86 *ZTX 60V 450mA pkg:SOT-223 .SUBCKT XZVP2106G 3 4 5 5 M1 3 2 5 5 P2106 L=1 W=1 RG 4 2 160 RL 3 5 1.2E8 D1 3 5 DP2106 .MODEL P2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CGSO=47E-12 CGDO=10E-12 CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DP2106 D IS=2E-13 RS=0.309 .ENDS XZVP2106G *ZVP3306 ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 12/85 *ZTX 60V 160mA pkg:TO-92 .SUBCKT XZVP3306 3 4 5 5 M1 3 2 5 5 P3306M L=1 W=1 RG 4 2 252 RL 3 5 1.2E8 D1 3 5 P3306D .MODEL P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 KP=.145 +CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1 LAMBDA=6.67E-3 .MODEL P3306D D IS=5E-12 RS=.768 .ENDS XZVP3306 * Copyright notice for all models labeled "ZETEX": * * (C) 1992 ZETEX PLC * * The copyright in these models and the designs embodied belong * to Zetex PLC ("Zetex"). They are supplied free of charge by * Zetex for the purpose of research and design and may be used or * copied intact (including this notice) for that purpose only. * All other rights are reserved. The models are believed accurate * but no condition or warranty as to their merchantability or * fitness for purpose is given and no liability in respect of any * use is accepted by Zetex PLC, its distributors or agents. * * * Zetex PLC, Fields New Road, Chadderton, Oldham OL9 8NP U.K.