*============================================== *N-EMOS 3T pinout: D,G,S *Copyright (c) 1996 MicroCode Engineering, Inc. *All Rights Reserved *============================================== *NMOS *Default N-Channel MOSFET parameter values .MODEL MNMOS~ NMOS() *2N3796 MCE 7/6/95 *Assumes default L=100U W=100U *25V 20mA 150 ohm .MODEL M2N3796 NMOS (LEVEL=1 VTO=3 KP=960U GAMMA=3.72 + PHI=.75 LAMBDA=4M RD=21 RS=21 IS=10F PB=.8 MJ=.46 + CBD=13.2P CBS=15.9P CGSO=6N CGDO=5N CGBO=39N) *2N3797 MCE 7/6/95 *Assumes default L=100U W=100U *25V 20mA 150 ohm .MODEL M2N3797 NMOS (LEVEL=1 VTO=3 KP=1.8M GAMMA=3.72 + PHI=.75 LAMBDA=7.5M RD=21 RS=21 IS=10F PB=.8 MJ=.46 + CBD=13.2P CBS=15.9P CGSO=6N CGDO=5N CGBO=39N) *2N4351 MCE 7/6/95 *Assumes default L=100U W=100U *25V 30mA 100 ohm .MODEL M2N4351 NMOS (LEVEL=1 VTO=2.1 KP=1.12M GAMMA=2.6 + PHI=.75 LAMBDA=2.49M RD=14 RS=14 IS=15F PB=.8 MJ=.46 + CBD=7.95P CBS=9.54P CGSO=11.7N CGDO=9.75N CGBO=16N) *2N7000 ZETEX Spice Mosfet Subcircuit Nodes D G S Last revision 11/91 *ZTX 60V 200mA pkg:TO-92 .SUBCKT X2N7000 3 4 5 5 M1 3 2 5 5 NMOD1 L=1 W=1 RG 4 2 343 RL 3 5 6E6 D1 5 3 DIODE1 .MODEL NMOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS X2N7000 *2N7002 ZETEX Spice Mosfet Subcircuit Nodes D G S Last revision 11/91 *ZTX 60V 115mA pkg:SOT-23 .SUBCKT X2N7002 3 4 5 5 M1 3 2 5 5 NMOD1 L=1 W=1 RG 4 2 343 RL 3 5 6E6 D1 5 3 DIODE1 .MODEL NMOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS X2N7002 *BS170 ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 12/85 *ZTX 60V 270mA pkg:TO-92 .SUBCKT XBS170 3 4 5 5 M1 3 2 5 5 N3306M L=1 W=1 RG 4 2 270 RL 3 5 1.2E8 D1 5 3 N3306D .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS XBS170 *IRF510 MCE 4-2-96 *100V 5.6A .54 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF510 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .255 RS 30 3 14.5M RG 20 2 26.7 CGS 2 3 165P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 192P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=3 KP=.561) .MODEL DCGD D (CJO=192P VJ=.6 M=.68) .MODEL DSUB D (IS=23.2N N=1.5 RS=.312 BV=100 CJO=284P VJ=.8 M=.42 TT=100N) .MODEL DLIM D (IS=100U) .ENDS XIRF510 *IRF520 MCE 4-2-96 *100V 9.2A .27 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF520 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .127 RS 30 3 7.75M RG 20 2 19.6 CGS 2 3 326P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 436P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=3 KP=1.49) .MODEL DCGD D (CJO=436P VJ=.6 M=.68) .MODEL DSUB D (IS=38.2N N=1.5 RS=.114 BV=100 CJO=499P VJ=.8 M=.42 TT=110N) .MODEL DLIM D (IS=100U) .ENDS XIRF520 *IRF530 MCE 2-20-96 *100V 14A .16 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF530 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 39.7M RS 30 3 3.14M RG 20 2 13 CGS 2 3 610P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 770P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=3 KP=4.5) .MODEL DCGD D (CJO=770P VJ=.6 M=.68) .MODEL DSUB D (IS=58.1N N=1.5 RS=28.5M BV=100 CJO=817P VJ=.8 M=.42 TT=150N) .MODEL DLIM D (IS=100U) .ENDS XIRF530 *IRF540 MCE 4-2-96 *100V 28A .077 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF540 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 35.5M RS 30 3 2.92M RG 20 2 10.8 CGS 2 3 1.58N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.54N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=3 KP=5.03) .MODEL DCGD D (CJO=1.54N VJ=.6 M=.68) .MODEL DSUB D (IS=116N N=1.5 RS=62.5M BV=100 CJO=1.89N VJ=.8 M=.42 TT=180N) .MODEL DLIM D (IS=100U) .ENDS XIRF540 *IRF610 MCE 4-2-96 *200V 3.3A 1.5 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF610 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .711 RS 30 3 38.5M RG 20 2 45.4 CGS 2 3 125P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 192P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=3 KP=.309) .MODEL DCGD D (CJO=192P VJ=.6 M=.68) .MODEL DSUB D (IS=13.7N N=1.5 RS=.378 BV=200 CJO=163P VJ=.8 M=.42 TT=150N) .MODEL DLIM D (IS=100U) .ENDS XIRF610 *IRF614 MCE 4-2-96 *250V 2.7A 2 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF614 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .949 RS 30 3 51M RG 20 2 55.5 CGS 2 3 130P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 123P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=521K ETA=2M VTO=3 KP=.472) .MODEL DCGD D (CJO=123P VJ=.6 M=.68) .MODEL DSUB D (IS=11.2N N=1.5 RS=.463 BV=250 CJO=139P VJ=.8 M=.42 TT=190N) .MODEL DLIM D (IS=100U) .ENDS XIRF614 *IRF620 MCE 4-2-96 *200V 5.2A .8 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF620 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .379 RS 30 3 21M RG 20 2 28.8 CGS 2 3 230P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 385P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=3 KP=.701) .MODEL DCGD D (CJO=385P VJ=.6 M=.68) .MODEL DSUB D (IS=21.5N N=1.5 RS=.202 BV=200 CJO=301P VJ=.8 M=.42 TT=150N) .MODEL DLIM D (IS=100U) .ENDS XIRF620 *IRF624 MCE 4-2-96 *250V 4.4A 1.1 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF624 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .521 RS 30 3 28.5M RG 20 2 34.1 CGS 2 3 245P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 192P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=521K ETA=2M VTO=3 KP=.807) .MODEL DCGD D (CJO=192P VJ=.6 M=.68) .MODEL DSUB D (IS=18.2N N=1.5 RS=.238 BV=250 CJO=266P VJ=.8 M=.42 TT=200N) .MODEL DLIM D (IS=100U) .ENDS XIRF624 *IRF630 MCE 4-2-96 *200V 9A .4 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF630 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .189 RS 30 3 11M RG 20 2 16.6 CGS 2 3 724P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 976P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=3 KP=2.58) .MODEL DCGD D (CJO=976P VJ=.6 M=.68) .MODEL DSUB D (IS=37.3N N=1.5 RS=.138 BV=200 CJO=705P VJ=.8 M=.42 TT=170N) .MODEL DLIM D (IS=100U) .ENDS XIRF630 *IRF634 MCE 4-2-96 *250V 8.1A .45 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF634 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .212 RS 30 3 12.2M RG 20 2 18.5 CGS 2 3 718P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 667P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=521K ETA=2M VTO=3 KP=.468) .MODEL DCGD D (CJO=667P VJ=.6 M=.68) .MODEL DSUB D (IS=33.6N N=1.5 RS=.154 BV=250 CJO=593P VJ=.8 M=.42 TT=220N) .MODEL DLIM D (IS=100U) .ENDS XIRF634 *IRF640 MCE 4-2-96 *200V 18A .18 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF640 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 84.5M RS 30 3 5.5M RG 20 2 9.09 CGS 2 3 1.17N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.66N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=3 KP=3.94) .MODEL DCGD D (CJO=1.66N VJ=.6 M=.68) .MODEL DSUB D (IS=74.7N N=1.5 RS=69.4M BV=200 CJO=1.29N VJ=.8 M=.42 TT=300N) .MODEL DLIM D (IS=100U) .ENDS XIRF640 *IRF644 MCE 4-2-96 *250V 14A .28 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF644 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .132 RS 30 3 8M RG 20 2 21.6 CGS 2 3 1.21N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.09N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=521K ETA=2M VTO=3 KP=4.98) .MODEL DCGD D (CJO=1.09N VJ=.6 M=.68) .MODEL DSUB D (IS=58.1N N=1.5 RS=75M BV=250 CJO=1.05N VJ=.8 M=.42 TT=250N) .MODEL DLIM D (IS=100U) .ENDS XIRF644 *IRF710 MCE 4-2-96 *400V 2A 3.6 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF710 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 1.7 RS 30 3 91M RG 20 2 75 CGS 2 3 163P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80.9P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=833K ETA=2M VTO=3 KP=.736) .MODEL DCGD D (CJO=80.9P VJ=.6 M=.68) .MODEL DSUB D (IS=8.3N N=1.5 RS=.425 BV=400 CJO=119P VJ=.8 M=.42 TT=240N) .MODEL DLIM D (IS=100U) .ENDS XIRF710 *IRF720 MCE 4-2-96 *400V 3.3A 1.8 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF720 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .854 RS 30 3 46M RG 20 2 45.4 CGS 2 3 363P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 603P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=833K ETA=2M VTO=3 KP=1.27) .MODEL DCGD D (CJO=603P VJ=.6 M=.68) .MODEL DSUB D (IS=13.7N N=1.5 RS=.257 BV=400 CJO=314P VJ=.8 M=.42 TT=270N) .MODEL DLIM D (IS=100U) .ENDS XIRF720 *IRF730 MCE 4-2-96 *400V 5.5A 1 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF730 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .474 RS 30 3 26M RG 20 2 27.2 CGS 2 3 636P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 821P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=833K ETA=2M VTO=3 KP=2.25) .MODEL DCGD D (CJO=821P VJ=.6 M=.68) .MODEL DSUB D (IS=22.8N N=1.5 RS=.154 BV=400 CJO=456P VJ=.8 M=.42 TT=270N) .MODEL DLIM D (IS=100U) .ENDS XIRF730 *IRF740 MCE 4-2-96 *400V 10A .55 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF740 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .26 RS 30 3 14.7M RG 20 2 15 CGS 2 3 1.28N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.54N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=833K ETA=2M VTO=3 KP=4.95) .MODEL DCGD D (CJO=1.54N VJ=.6 M=.68) .MODEL DSUB D (IS=41.5N N=1.5 RS=.125 BV=400 CJO=903P VJ=.8 M=.42 TT=370N) .MODEL DLIM D (IS=100U) .ENDS XIRF740 *IRF820 MCE 4-2-96 *500V 2.5A 3 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF820 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 1.42 RS 30 3 76M RG 20 2 60 CGS 2 3 323P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 475P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=1.04MEG ETA=2M VTO=3 KP=1.3) .MODEL DCGD D (CJO=475P VJ=.6 M=.68) .MODEL DSUB D (IS=10.3N N=1.5 RS=.34 BV=500 CJO=236P VJ=.8 M=.42 TT=260N) .MODEL DLIM D (IS=100U) .ENDS XIRF820 *IRF830 MCE 4-2-96 *500V 4.5A 1.5 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF830 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .711 RS 30 3 38.5M RG 20 2 33.3 CGS 2 3 542P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 873P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=1.04MEG ETA=2M VTO=3 KP=2) .MODEL DCGD D (CJO=873P VJ=.6 M=.68) .MODEL DSUB D (IS=18.6N N=1.5 RS=.188 BV=500 CJO=395P VJ=.8 M=.42 TT=320N) .MODEL DLIM D (IS=100U) .ENDS XIRF830 *IRF840 MCE 4-2-96 *500V 8A .85 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF840 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .402 RS 30 3 22.2M RG 20 2 18.7 CGS 2 3 1.18N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.54N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=1.04MEG ETA=2M VTO=3 KP=4.33) .MODEL DCGD D (CJO=1.54N VJ=.6 M=.68) .MODEL DSUB D (IS=33.2N N=1.5 RS=.156 BV=500 CJO=817P VJ=.8 M=.42 TT=460N) .MODEL DLIM D (IS=100U) .ENDS XIRF840 *IRF1010 MCE 4-2-96 *55V 75A .014 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRF1010 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.65M RS 30 3 1.35M RG 20 2 12.1 CGS 2 3 2.15N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.49N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=114K ETA=2M VTO=3 KP=19.4) .MODEL DCGD D (CJO=4.49N VJ=.6 M=.68) .MODEL DSUB D (IS=311N N=1.5 RS=8.67M BV=55 CJO=4.08N VJ=.8 M=.42 TT=100N) .MODEL DLIM D (IS=100U) .ENDS XIRF1010 *IRF7101 MCE 4-2-96 *20V 3.5A .1 ohm HEXFET pkg:SO-8 (A:8,2,1)(B:6,4,3) .SUBCKT XIRF7101 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 46.5M RS 30 3 3.5M RG 20 2 42.8 CGS 2 3 245P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 687P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 6N .MODEL DMOS NMOS (LEVEL=3 THETA=80M VMAX=41.6K ETA=2M VTO=2 KP=.86) .MODEL DCGD D (CJO=687P VJ=.6 M=.68) .MODEL DSUB D (IS=14.5N N=1.5 RS=.157 BV=20 CJO=612P VJ=.8 M=.42 TT=36N) .MODEL DLIM D (IS=100U) .ENDS XIRF7101 *IRF7102 MCE 4-2-96 *50V 2A .3 ohm HEXFET pkg:SO-8 (A:8,2,1)(B:6,4,3) .SUBCKT XIRF7102 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .141 RS 30 3 8.5M RG 20 2 75 CGS 2 3 108P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 154P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 6N .MODEL DMOS NMOS (LEVEL=3 THETA=80M VMAX=104K ETA=2M VTO=2.25 KP=1) .MODEL DCGD D (CJO=154P VJ=.6 M=.68) .MODEL DSUB D (IS=8.3N N=1.5 RS=.325 BV=50 CJO=219P VJ=.8 M=.42 TT=38N) .MODEL DLIM D (IS=100U) .ENDS XIRF7102 *IRFBC20 MCE 4-9-96 *600V 2.2A 4.4 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBC20 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 2.09 RS 30 3 .111 RG 20 2 68.2 CGS 2 3 341P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 110P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.05) .MODEL DCGD D (CJO=110P VJ=.6 M=.68) .MODEL DSUB D (IS=9.13N N=1.5 RS=.386 BV=600 CJO=169P VJ=.8 M=.42 TT=290N) .MODEL DLIM D (IS=100U) .ENDS XIRFBC20 *IRFBC30 MCE 4-9-96 *600V 3.6A 2.2 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBC30 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 1.04 RS 30 3 56M RG 20 2 41.6 CGS 2 3 641P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 244P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.98) .MODEL DCGD D (CJO=244P VJ=.6 M=.68) .MODEL DSUB D (IS=14.9N N=1.5 RS=.236 BV=600 CJO=288P VJ=.8 M=.42 TT=370N) .MODEL DLIM D (IS=100U) .ENDS XIRFBC30 *IRFBC40 MCE 4-9-96 *600V 6.2A 1.2 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBC40 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 .569 RS 30 3 31M RG 20 2 24.2 CGS 2 3 1.27N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 385P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=4.18) .MODEL DCGD D (CJO=385P VJ=.6 M=.68) .MODEL DSUB D (IS=25.7N N=1.5 RS=.121 BV=600 CJO=559P VJ=.8 M=.42 TT=450N) .MODEL DLIM D (IS=100U) .ENDS XIRFBC40 *IRFBE20 MCE 4-9-96 *800V 1.8A 6.5 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBE20 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 3.08 RS 30 3 .163 RG 20 2 83.3 CGS 2 3 440P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=.407) .MODEL DCGD D (CJO=1.15N VJ=.6 M=.68) .MODEL DSUB D (IS=7.47N N=1.5 RS=.361 BV=800 CJO=322P VJ=.8 M=.42 TT=380N) .MODEL DLIM D (IS=100U) .ENDS XIRFBE20 *IRFBE30 MCE 4-9-96 *800V 4.1A 3 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBE30 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 1.42 RS 30 3 76M RG 20 2 36.6 CGS 2 3 1.11N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.44N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.75) .MODEL DCGD D (CJO=2.44N VJ=.6 M=.68) .MODEL DSUB D (IS=17N N=1.5 RS=.256 BV=800 CJO=667P VJ=.8 M=.42 TT=480N) .MODEL DLIM D (IS=100U) .ENDS XIRFBE30 *IRFBF20 MCE 4-9-96 *900V 1.7A 8 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBF20 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 3.8 RS 30 3 .201 RG 20 2 88.2 CGS 2 3 472P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 231P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=.252) .MODEL DCGD D (CJO=231P VJ=.6 M=.68) .MODEL DSUB D (IS=7.05N N=1.5 RS=.441 BV=900 CJO=159P VJ=.8 M=.42 TT=350N) .MODEL DLIM D (IS=100U) .ENDS XIRFBF20 *IRFBF30 MCE 4-9-96 *900V 3.6A 3.7 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBF30 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 1.75 RS 30 3 93.5M RG 20 2 41.6 CGS 2 3 1N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.56N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.68) .MODEL DCGD D (CJO=2.56N VJ=.6 M=.68) .MODEL DSUB D (IS=14.9N N=1.5 RS=.291 BV=900 CJO=688P VJ=.8 M=.42 TT=430N) .MODEL DLIM D (IS=100U) .ENDS XIRFBF30 *IRFBG20 MCE 4-9-96 *1000V 1.4A 11 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBG20 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.22 RS 30 3 .276 RG 20 2 107 CGS 2 3 483P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 218P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=.833) .MODEL DCGD D (CJO=218P VJ=.6 M=.68) .MODEL DSUB D (IS=5.81N N=1.5 RS=.535 BV=1K CJO=150P VJ=.8 M=.42 TT=130N) .MODEL DLIM D (IS=100U) .ENDS XIRFBG20 *IRFBG30 MCE 4-9-96 *1000V 3.1A 5 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFBG30 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 2.37 RS 30 3 .126 RG 20 2 48.4 CGS 2 3 930P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 642P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.62) .MODEL DCGD D (CJO=642P VJ=.6 M=.68) .MODEL DSUB D (IS=12.8N N=1.5 RS=.338 BV=1K CJO=387P VJ=.8 M=.42 TT=410N) .MODEL DLIM D (IS=100U) .ENDS XIRFBG30 *IRFZ14 MCE 4-9-96 *60V 10A .2 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFZ14 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 94M RS 30 3 6M RG 20 2 18.4 CGS 2 3 271P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 372P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=1.29) .MODEL DCGD D (CJO=372P VJ=.6 M=.68) .MODEL DSUB D (IS=41.5N N=1.5 RS=85M BV=60 CJO=563P VJ=.8 M=.42 TT=70N) .MODEL DLIM D (IS=100U) .ENDS XIRFZ14 *50V 15A .1 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFZ20 10 20 30 30 M1 4 1 5 5 DMOS L=1U W=1U RG 20 1 10 RD 10 4 37M RDS 4 5 1.18MEG CGD 7 4 590P RCG 7 4 10MEG MCG 7 9 1 1 SW ECG 9 1 1 4 1 DGD 1 6 DCGD MDG 6 8 4 4 SW EDG 8 4 4 1 1 DDS 5 4 DSUB LS 5 30 7.5N .MODEL DMOS NMOS (LEVEL=3 VMAX=1.6MEG THETA=300M VTO=3.2 + KP=5.0 RS=5M IS=2.16P CGSO=725U) .MODEL SW NMOS (LEVEL=3 VTO=0 KP=20) .MODEL DCGD D (CJO=590P M=.5 VJ=.41) .MODEL DSUB D (IS=2.16P RS=0 BV=50 IBV=.001 + VJ=.8 M=.4 CJO=902P TT=144N) .ENDS XIRFZ20 *IRFZ24 MCE 4-9-96 *60V 17A .1 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFZ24 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 46.5M RS 30 3 3.5M RG 20 2 20 CGS 2 3 561P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.01N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=4.08) .MODEL DCGD D (CJO=1.01N VJ=.6 M=.68) .MODEL DSUB D (IS=70.5N N=1.5 RS=44.1M BV=60 CJO=1.2N VJ=.8 M=.42 TT=88N) .MODEL DLIM D (IS=100U) .ENDS XIRFZ24 *IRFZ34 MCE 4-9-96 *60V 30A .05 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFZ34 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 22.7M RS 30 3 2.25M RG 20 2 19.4 CGS 2 3 1.1N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.28N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=6.48) .MODEL DCGD D (CJO=1.28N VJ=.6 M=.68) .MODEL DSUB D (IS=124N N=1.5 RS=28.3M BV=60 CJO=2.15N VJ=.8 M=.42 TT=120N) .MODEL DLIM D (IS=100U) .ENDS XIRFZ34 *IRFZ44 MCE 4-8-96 *60V 50A .028 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFZ44 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 12.3M RS 30 3 1.7M RG 20 2 24.7 CGS 2 3 1.73N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.18N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=9.79) .MODEL DCGD D (CJO=2.18N VJ=.6 M=.68) .MODEL DSUB D (IS=207N N=1.5 RS=35M BV=60 CJO=3.22N VJ=.8 M=.42 TT=120N) .MODEL DLIM D (IS=100U) .ENDS XIRFZ44 *IRFZ46 MCE 4-9-96 *50V 50A .024 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFZ46 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.4M RS 30 3 1.6M RG 20 2 27.8 CGS 2 3 1.64N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.05N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=104K ETA=2M VTO=3 KP=33.2) .MODEL DCGD D (CJO=2.05N VJ=.6 M=.68) .MODEL DSUB D (IS=207N N=1.5 RS=35M BV=50 CJO=3.44N VJ=.8 M=.42 TT=66N) .MODEL DLIM D (IS=100U) .ENDS XIRFZ46 *IRFZ48 MCE 4-8-96 *60V 50A .018 ohm HEXFET pkg:TO-220 2,1,3 .SUBCKT XIRFZ48 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 7.55M RS 30 3 1.45M RG 20 2 68.4 CGS 2 3 2.21N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.44N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=22.8) .MODEL DCGD D (CJO=2.44N VJ=.6 M=.68) .MODEL DSUB D (IS=207N N=1.5 RS=25M BV=60 CJO=4.77N VJ=.8 M=.42 TT=120N) .MODEL DLIM D (IS=100U) .ENDS XIRFZ48 *MP15N06E MCE 7/6/95 *60V 15A .08 ohm Power MOSFET .SUBCKT XMP15N06E 10 20 40 40 M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 37M RS 30 3 3M RG 20 2 56 CGS 2 3 432P EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 549P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.5N .MODEL DMOS NMOS(LEVEL=3 THETA=58M VMAX=125K ETA=2M VTO=3.1 KP=6.45) .MODEL DCGD D(CJO=549P VJ=.6 M=.68) .MODEL DSUB D(IS=62.2N N=1.5 RS=25.3M BV=60 CJO=838P VJ=.8 M=.42 TT=317N) .MODEL DLIM D(IS=100U) .ENDS XMP15N06E *VN10LF ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 12/85 *ZTX 60V 150mA pkg:SOT-23 .SUBCKT XVN10LF 3 4 5 5 M1 3 2 5 5 N3306M L=1 W=1 RG 4 2 270 RL 3 5 1.2E8 D1 5 3 N3306D .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS XVN10LF *ZVN0124 ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 6/91 *ZTX 240V 160mA pkg:TO-92 .SUBCKT XZVN0124 3 4 5 5 M1 3 2 5 5 N0124 L=1 W=1 RG 4 2 225 RL 3 5 2.4E7 D1 5 3 DN0124 .MODEL N0124 NMOS VTO=1.5512 RS=1.436 RD=9.254 IS=1E-15 KP=1.077 +CGSO=60E-12 CGDO=2E-12 CBD=36E-12 PB=1 LAMBDA=0 .MODEL DN0124 D IS=3.071E-12 N=1.026 RS=0.511 .ENDS XZVN0124 *ZVN2106 ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 3/86 *ZTX 60V 450mA pkg:TO-92 .SUBCKT XZVN2106 3 4 5 5 M1 3 2 5 5 N2106 L=1 W=1 RG 4 2 120 RL 3 5 1.2E8 D1 5 3 DN2106 .MODEL N2106 NMOS VTO=1.512 RS=0.772 RD=0.449 IS=1E-15 KP=0.653 +CGSO=45E-12 CGDO=15E-12 CBD=63E-12 PB=1 LAMBDA=1.95E-3 .MODEL DN2106 D IS=2.25E-12 RS=0.404 .ENDS XZVN2106 *ZVN2106G ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 3/86 *ZTX 60V 700mA pkg:SOT-223 .SUBCKT XZVN2106G 3 4 5 5 M1 3 2 5 5 N2106 L=1 W=1 RG 4 2 120 RL 3 5 1.2E8 D1 5 3 DN2106 .MODEL N2106 NMOS VTO=1.512 RS=0.772 RD=0.449 IS=1E-15 KP=0.653 +CGSO=45E-12 CGDO=15E-12 CBD=63E-12 PB=1 LAMBDA=1.95E-E .MODEL DN2106 D IS=2.25E-12 RS=0.404 .ENDS XZVN2106G *ZVN3306 ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 12/85 *ZTX 60V 270mA pkg:TO-92 .SUBCKT XZVN3306 3 4 5 5 M1 3 2 5 5 N3306M L=1 W=1 RG 4 2 270 RL 3 5 1.2E8 D1 5 3 N3306D .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS XZVN3306 *ZVN3306F ZETEX Mosfet Spice Subcircuit Nodes D G S Last revision 12/85 *ZTX 60V 150mA pkg:SOT-23 .SUBCKT XZVN3306F 3 4 5 5 M1 3 2 5 5 N3306M L=1 W=1 RG 4 2 270 RL 3 5 1.2E8 D1 5 3 N3306D .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS XZVN3306F *ZVN4106 ZETEX Spice Mosfet Subcircuit Nodes D G S Last revision 11/91 *ZTX 60V 200mA pkg:SOT-23 .SUBCKT XZVN4106 3 4 5 5 M1 3 2 5 5 NMOD1 L=1 W=1 RG 4 2 343 RL 3 5 6E6 D1 5 3 DIODE1 .MODEL NMOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS XZVN4106 *ZVN4210 ZETEX Spice Mosfet Subcircuit Nodes D G S Last revision 11/91 *ZTX .SUBCKT XZVN4210 3 4 5 5 M1 3 2 5 5 NMOD1 L=1 W=1 RG 4 2 401.5 RL 3 5 1E7 D1 5 3 DIODE1 .MODEL NMOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082 +CGSO=61.5P CGDO=3.5P CBD=108P PB=1 LAMBDA=0 .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166 .ENDS XZVN4210 *ZVN4310 ZETEX Spice model Nodes D G S Last revision 6/92 *ZTX .SUBCKT XZVN4310 30 40 50 50 M1 30 20 50 50 NMOD1 L=1 W=1 RG 40 20 82 RL 30 50 1E7 D1 50 30 DIODE1 .MODEL NMOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02 +CGSO=200E-12 CGDO=13.5E-12 CBD=288E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844 .ENDS XZVN4310 * Copyright notice for all models labeled "ZETEX": * * (C) 1992 ZETEX PLC * * The copyright in these models and the designs embodied belong * to Zetex PLC ("Zetex"). They are supplied free of charge by * Zetex for the purpose of research and design and may be used or * copied intact (including this notice) for that purpose only. * All other rights are reserved. The models are believed accurate * but no condition or warranty as to their merchantability or * fitness for purpose is given and no liability in respect of any * use is accepted by Zetex PLC, its distributors or agents. * * * Zetex PLC, Fields New Road, Chadderton, Oldham OL9 8NP U.K.