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GUI/SW2/SRC/lib/models/libs/zetec-nmos.lib 27.7 KB
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886c558b   Steve Greedy   SACAMOS Public Re... 
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*==============================================
*N-EMOS 3T pinout: D,G,S
*Copyright (c) 1996 MicroCode Engineering, Inc.
*All Rights Reserved
*==============================================

*NMOS
*Default N-Channel MOSFET parameter values
.MODEL MNMOS~ NMOS()

*2N3796  MCE  7/6/95
*Assumes default L=100U W=100U
*25V  20mA 150 ohm
.MODEL M2N3796 NMOS (LEVEL=1 VTO=3 KP=960U GAMMA=3.72
+ PHI=.75 LAMBDA=4M RD=21 RS=21 IS=10F PB=.8 MJ=.46
+ CBD=13.2P CBS=15.9P CGSO=6N CGDO=5N CGBO=39N)

*2N3797  MCE  7/6/95
*Assumes default L=100U W=100U
*25V  20mA 150 ohm
.MODEL M2N3797 NMOS (LEVEL=1 VTO=3 KP=1.8M GAMMA=3.72
+ PHI=.75 LAMBDA=7.5M RD=21 RS=21 IS=10F PB=.8 MJ=.46
+ CBD=13.2P CBS=15.9P CGSO=6N CGDO=5N CGBO=39N)

*2N4351  MCE  7/6/95
*Assumes default L=100U W=100U
*25V  30mA 100 ohm
.MODEL M2N4351 NMOS (LEVEL=1 VTO=2.1 KP=1.12M GAMMA=2.6
+ PHI=.75 LAMBDA=2.49M RD=14 RS=14 IS=15F PB=.8 MJ=.46
+ CBD=7.95P CBS=9.54P CGSO=11.7N CGDO=9.75N CGBO=16N)

*2N7000  ZETEX  Spice Mosfet Subcircuit  Nodes D G S  Last revision 11/91
*ZTX 60V 200mA pkg:TO-92
.SUBCKT X2N7000 3 4 5 5
M1 3 2 5 5 NMOD1 L=1 W=1
RG 4 2 343
RL 3 5 6E6
D1 5 3 DIODE1
.MODEL NMOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296
+CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6
.MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222
.ENDS X2N7000

*2N7002  ZETEX  Spice Mosfet Subcircuit  Nodes D G S   Last revision 11/91
*ZTX 60V 115mA pkg:SOT-23
.SUBCKT X2N7002 3 4 5 5
M1 3 2 5 5 NMOD1 L=1 W=1
RG 4 2 343
RL 3 5 6E6
D1 5 3 DIODE1
.MODEL NMOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296
+CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6
.MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222
.ENDS X2N7002

*BS170 ZETEX  Mosfet Spice Subcircuit  Nodes D G S   Last revision  12/85
*ZTX 60V 270mA pkg:TO-92
.SUBCKT XBS170 3 4 5 5
M1 3 2 5 5 N3306M L=1 W=1
RG 4 2 270
RL 3 5 1.2E8
D1 5 3 N3306D
.MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
+CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1
.MODEL N3306D D IS=5E-12 RS=.768
.ENDS XBS170

*IRF510 MCE 4-2-96
*100V  5.6A .54 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF510   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .255
RS  30  3  14.5M
RG  20  2  26.7
CGS  2  3  165P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  192P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=3 KP=.561)
.MODEL DCGD D (CJO=192P VJ=.6 M=.68)
.MODEL DSUB D (IS=23.2N N=1.5 RS=.312 BV=100 CJO=284P VJ=.8 M=.42 TT=100N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF510

*IRF520 MCE 4-2-96
*100V  9.2A .27 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF520   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .127
RS  30  3  7.75M
RG  20  2  19.6
CGS  2  3  326P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  436P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=3 KP=1.49)
.MODEL DCGD D (CJO=436P VJ=.6 M=.68)
.MODEL DSUB D (IS=38.2N N=1.5 RS=.114 BV=100 CJO=499P VJ=.8 M=.42 TT=110N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF520

*IRF530 MCE 2-20-96
*100V  14A .16 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF530  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  39.7M
RS  30  3  3.14M
RG  20  2  13
CGS  2  3  610P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  770P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=3 KP=4.5)
.MODEL DCGD D (CJO=770P VJ=.6 M=.68)
.MODEL DSUB D (IS=58.1N N=1.5 RS=28.5M BV=100 CJO=817P VJ=.8 M=.42 TT=150N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF530

*IRF540 MCE 4-2-96
*100V  28A .077 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF540   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  35.5M
RS  30  3  2.92M
RG  20  2  10.8
CGS  2  3  1.58N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.54N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=3 KP=5.03)
.MODEL DCGD D (CJO=1.54N VJ=.6 M=.68)
.MODEL DSUB D (IS=116N N=1.5 RS=62.5M BV=100 CJO=1.89N VJ=.8 M=.42 TT=180N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF540

*IRF610 MCE 4-2-96
*200V  3.3A 1.5 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF610   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .711
RS  30  3  38.5M
RG  20  2  45.4
CGS  2  3  125P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  192P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=3 KP=.309)
.MODEL DCGD D (CJO=192P VJ=.6 M=.68)
.MODEL DSUB D (IS=13.7N N=1.5 RS=.378 BV=200 CJO=163P VJ=.8 M=.42 TT=150N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF610

*IRF614 MCE 4-2-96
*250V  2.7A 2 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF614   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .949
RS  30  3  51M
RG  20  2  55.5
CGS  2  3  130P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  123P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=521K ETA=2M VTO=3 KP=.472)
.MODEL DCGD D (CJO=123P VJ=.6 M=.68)
.MODEL DSUB D (IS=11.2N N=1.5 RS=.463 BV=250 CJO=139P VJ=.8 M=.42 TT=190N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF614

*IRF620 MCE 4-2-96
*200V  5.2A .8 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF620   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .379
RS  30  3  21M
RG  20  2  28.8
CGS  2  3  230P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  385P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=3 KP=.701)
.MODEL DCGD D (CJO=385P VJ=.6 M=.68)
.MODEL DSUB D (IS=21.5N N=1.5 RS=.202 BV=200 CJO=301P VJ=.8 M=.42 TT=150N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF620

*IRF624 MCE 4-2-96
*250V  4.4A 1.1 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF624   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .521
RS  30  3  28.5M
RG  20  2  34.1
CGS  2  3  245P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  192P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=521K ETA=2M VTO=3 KP=.807)
.MODEL DCGD D (CJO=192P VJ=.6 M=.68)
.MODEL DSUB D (IS=18.2N N=1.5 RS=.238 BV=250 CJO=266P VJ=.8 M=.42 TT=200N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF624

*IRF630 MCE 4-2-96
*200V  9A .4 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF630   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .189
RS  30  3  11M
RG  20  2  16.6
CGS  2  3  724P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  976P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=3 KP=2.58)
.MODEL DCGD D (CJO=976P VJ=.6 M=.68)
.MODEL DSUB D (IS=37.3N N=1.5 RS=.138 BV=200 CJO=705P VJ=.8 M=.42 TT=170N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF630

*IRF634 MCE 4-2-96
*250V  8.1A .45 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF634   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .212
RS  30  3  12.2M
RG  20  2  18.5
CGS  2  3  718P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  667P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=521K ETA=2M VTO=3 KP=.468)
.MODEL DCGD D (CJO=667P VJ=.6 M=.68)
.MODEL DSUB D (IS=33.6N N=1.5 RS=.154 BV=250 CJO=593P VJ=.8 M=.42 TT=220N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF634

*IRF640 MCE 4-2-96
*200V  18A .18 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF640   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  84.5M
RS  30  3  5.5M
RG  20  2  9.09
CGS  2  3  1.17N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.66N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=416K ETA=2M VTO=3 KP=3.94)
.MODEL DCGD D (CJO=1.66N VJ=.6 M=.68)
.MODEL DSUB D (IS=74.7N N=1.5 RS=69.4M BV=200 CJO=1.29N VJ=.8 M=.42 TT=300N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF640

*IRF644 MCE 4-2-96
*250V  14A .28 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF644   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .132
RS  30  3  8M
RG  20  2  21.6
CGS  2  3  1.21N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.09N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=521K ETA=2M VTO=3 KP=4.98)
.MODEL DCGD D (CJO=1.09N VJ=.6 M=.68)
.MODEL DSUB D (IS=58.1N N=1.5 RS=75M BV=250 CJO=1.05N VJ=.8 M=.42 TT=250N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF644

*IRF710 MCE 4-2-96
*400V  2A 3.6 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF710   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  1.7
RS  30  3  91M
RG  20  2  75
CGS  2  3  163P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  80.9P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=833K ETA=2M VTO=3 KP=.736)
.MODEL DCGD D (CJO=80.9P VJ=.6 M=.68)
.MODEL DSUB D (IS=8.3N N=1.5 RS=.425 BV=400 CJO=119P VJ=.8 M=.42 TT=240N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF710

*IRF720 MCE 4-2-96
*400V  3.3A 1.8 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF720   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .854
RS  30  3  46M
RG  20  2  45.4
CGS  2  3  363P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  603P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=833K ETA=2M VTO=3 KP=1.27)
.MODEL DCGD D (CJO=603P VJ=.6 M=.68)
.MODEL DSUB D (IS=13.7N N=1.5 RS=.257 BV=400 CJO=314P VJ=.8 M=.42 TT=270N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF720

*IRF730 MCE 4-2-96
*400V  5.5A 1 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF730   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .474
RS  30  3  26M
RG  20  2  27.2
CGS  2  3  636P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  821P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=833K ETA=2M VTO=3 KP=2.25)
.MODEL DCGD D (CJO=821P VJ=.6 M=.68)
.MODEL DSUB D (IS=22.8N N=1.5 RS=.154 BV=400 CJO=456P VJ=.8 M=.42 TT=270N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF730

*IRF740 MCE 4-2-96
*400V  10A .55 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF740   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .26
RS  30  3  14.7M
RG  20  2  15
CGS  2  3  1.28N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.54N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=833K ETA=2M VTO=3 KP=4.95)
.MODEL DCGD D (CJO=1.54N VJ=.6 M=.68)
.MODEL DSUB D (IS=41.5N N=1.5 RS=.125 BV=400 CJO=903P VJ=.8 M=.42 TT=370N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF740

*IRF820 MCE 4-2-96
*500V  2.5A 3 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF820   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  1.42
RS  30  3  76M
RG  20  2  60
CGS  2  3  323P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  475P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=1.04MEG ETA=2M VTO=3 KP=1.3)
.MODEL DCGD D (CJO=475P VJ=.6 M=.68)
.MODEL DSUB D (IS=10.3N N=1.5 RS=.34 BV=500 CJO=236P VJ=.8 M=.42 TT=260N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF820

*IRF830 MCE 4-2-96
*500V  4.5A 1.5 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF830   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .711
RS  30  3  38.5M
RG  20  2  33.3
CGS  2  3  542P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  873P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=1.04MEG ETA=2M VTO=3 KP=2)
.MODEL DCGD D (CJO=873P VJ=.6 M=.68)
.MODEL DSUB D (IS=18.6N N=1.5 RS=.188 BV=500 CJO=395P VJ=.8 M=.42 TT=320N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF830

*IRF840 MCE 4-2-96
*500V  8A .85 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF840   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .402
RS  30  3  22.2M
RG  20  2  18.7
CGS  2  3  1.18N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.54N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=1.04MEG ETA=2M VTO=3 KP=4.33)
.MODEL DCGD D (CJO=1.54N VJ=.6 M=.68)
.MODEL DSUB D (IS=33.2N N=1.5 RS=.156 BV=500 CJO=817P VJ=.8 M=.42 TT=460N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF840

*IRF1010 MCE 4-2-96
*55V  75A .014 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRF1010  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  5.65M
RS  30  3  1.35M
RG  20  2  12.1
CGS  2  3  2.15N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  4.49N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=114K ETA=2M VTO=3 KP=19.4)
.MODEL DCGD D (CJO=4.49N VJ=.6 M=.68)
.MODEL DSUB D (IS=311N N=1.5 RS=8.67M BV=55 CJO=4.08N VJ=.8 M=.42 TT=100N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF1010

*IRF7101 MCE 4-2-96
*20V  3.5A .1 ohm HEXFET pkg:SO-8 (A:8,2,1)(B:6,4,3)
.SUBCKT XIRF7101  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  46.5M
RS  30  3  3.5M
RG  20  2  42.8
CGS  2  3  245P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  687P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  6N
.MODEL DMOS NMOS (LEVEL=3 THETA=80M VMAX=41.6K ETA=2M VTO=2 KP=.86)
.MODEL DCGD D (CJO=687P VJ=.6 M=.68)
.MODEL DSUB D (IS=14.5N N=1.5 RS=.157 BV=20 CJO=612P VJ=.8 M=.42 TT=36N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF7101

*IRF7102 MCE 4-2-96
*50V  2A .3 ohm HEXFET pkg:SO-8 (A:8,2,1)(B:6,4,3)
.SUBCKT XIRF7102  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .141
RS  30  3  8.5M
RG  20  2  75
CGS  2  3  108P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  154P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  6N
.MODEL DMOS NMOS (LEVEL=3 THETA=80M VMAX=104K ETA=2M VTO=2.25 KP=1)
.MODEL DCGD D (CJO=154P VJ=.6 M=.68)
.MODEL DSUB D (IS=8.3N N=1.5 RS=.325 BV=50 CJO=219P VJ=.8 M=.42 TT=38N)
.MODEL DLIM D (IS=100U)
.ENDS XIRF7102

*IRFBC20 MCE 4-9-96
*600V 2.2A 4.4 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBC20  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  2.09
RS  30  3  .111
RG  20  2  68.2
CGS  2  3  341P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  110P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.05)
.MODEL DCGD D (CJO=110P VJ=.6 M=.68)
.MODEL DSUB D (IS=9.13N N=1.5 RS=.386 BV=600 CJO=169P VJ=.8 M=.42 TT=290N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBC20

*IRFBC30 MCE 4-9-96
*600V 3.6A 2.2 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBC30  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  1.04
RS  30  3  56M
RG  20  2  41.6
CGS  2  3  641P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  244P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.98)
.MODEL DCGD D (CJO=244P VJ=.6 M=.68)
.MODEL DSUB D (IS=14.9N N=1.5 RS=.236 BV=600 CJO=288P VJ=.8 M=.42 TT=370N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBC30

*IRFBC40 MCE 4-9-96
*600V 6.2A 1.2 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBC40  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  .569
RS  30  3  31M
RG  20  2  24.2
CGS  2  3  1.27N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  385P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=4.18)
.MODEL DCGD D (CJO=385P VJ=.6 M=.68)
.MODEL DSUB D (IS=25.7N N=1.5 RS=.121 BV=600 CJO=559P VJ=.8 M=.42 TT=450N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBC40

*IRFBE20 MCE 4-9-96
*800V 1.8A 6.5 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBE20  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  3.08
RS  30  3  .163
RG  20  2  83.3
CGS  2  3  440P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.15N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=.407)
.MODEL DCGD D (CJO=1.15N VJ=.6 M=.68)
.MODEL DSUB D (IS=7.47N N=1.5 RS=.361 BV=800 CJO=322P VJ=.8 M=.42 TT=380N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBE20

*IRFBE30 MCE 4-9-96
*800V 4.1A 3 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBE30  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  1.42
RS  30  3  76M
RG  20  2  36.6
CGS  2  3  1.11N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  2.44N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.75)
.MODEL DCGD D (CJO=2.44N VJ=.6 M=.68)
.MODEL DSUB D (IS=17N N=1.5 RS=.256 BV=800 CJO=667P VJ=.8 M=.42 TT=480N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBE30

*IRFBF20 MCE 4-9-96
*900V 1.7A 8 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBF20  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  3.8
RS  30  3  .201
RG  20  2  88.2
CGS  2  3  472P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  231P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=.252)
.MODEL DCGD D (CJO=231P VJ=.6 M=.68)
.MODEL DSUB D (IS=7.05N N=1.5 RS=.441 BV=900 CJO=159P VJ=.8 M=.42 TT=350N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBF20

*IRFBF30 MCE 4-9-96
*900V 3.6A 3.7 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBF30  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  1.75
RS  30  3  93.5M
RG  20  2  41.6
CGS  2  3  1N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  2.56N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.68)
.MODEL DCGD D (CJO=2.56N VJ=.6 M=.68)
.MODEL DSUB D (IS=14.9N N=1.5 RS=.291 BV=900 CJO=688P VJ=.8 M=.42 TT=430N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBF30

*IRFBG20 MCE 4-9-96
*1000V 1.4A 11 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBG20  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  5.22
RS  30  3  .276
RG  20  2  107
CGS  2  3  483P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  218P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=.833)
.MODEL DCGD D (CJO=218P VJ=.6 M=.68)
.MODEL DSUB D (IS=5.81N N=1.5 RS=.535 BV=1K CJO=150P VJ=.8 M=.42 TT=130N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBG20

*IRFBG30 MCE 4-9-96
*1000V 3.1A 5 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFBG30  10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  2.37
RS  30  3  .126
RG  20  2  48.4
CGS  2  3  930P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  642P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.62)
.MODEL DCGD D (CJO=642P VJ=.6 M=.68)
.MODEL DSUB D (IS=12.8N N=1.5 RS=.338 BV=1K CJO=387P VJ=.8 M=.42 TT=410N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFBG30

*IRFZ14 MCE 4-9-96
*60V  10A .2 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFZ14   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  94M
RS  30  3  6M
RG  20  2  18.4
CGS  2  3  271P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  372P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=1.29)
.MODEL DCGD D (CJO=372P VJ=.6 M=.68)
.MODEL DSUB D (IS=41.5N N=1.5 RS=85M BV=60 CJO=563P VJ=.8 M=.42 TT=70N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFZ14

*50V 15A .1 ohm  HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFZ20 10 20 30 30
M1   4  1  5  5  DMOS L=1U W=1U
RG  20  1  10
RD  10  4  37M
RDS  4  5  1.18MEG
CGD  7  4  590P
RCG  7  4  10MEG
MCG  7  9  1  1  SW
ECG  9  1  1  4  1
DGD  1  6  DCGD
MDG  6  8  4  4  SW
EDG  8  4  4  1  1
DDS  5  4  DSUB
LS   5 30  7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.6MEG THETA=300M VTO=3.2
+ KP=5.0 RS=5M IS=2.16P CGSO=725U)
.MODEL SW   NMOS (LEVEL=3 VTO=0 KP=20)
.MODEL DCGD D (CJO=590P M=.5 VJ=.41)
.MODEL DSUB D (IS=2.16P RS=0 BV=50 IBV=.001
+ VJ=.8 M=.4 CJO=902P TT=144N)
.ENDS XIRFZ20

*IRFZ24 MCE 4-9-96
*60V  17A .1 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFZ24   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  46.5M
RS  30  3  3.5M
RG  20  2  20
CGS  2  3  561P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.01N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=4.08)
.MODEL DCGD D (CJO=1.01N VJ=.6 M=.68)
.MODEL DSUB D (IS=70.5N N=1.5 RS=44.1M BV=60 CJO=1.2N VJ=.8 M=.42 TT=88N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFZ24

*IRFZ34 MCE 4-9-96
*60V  30A .05 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFZ34   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  22.7M
RS  30  3  2.25M
RG  20  2  19.4
CGS  2  3  1.1N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.28N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=6.48)
.MODEL DCGD D (CJO=1.28N VJ=.6 M=.68)
.MODEL DSUB D (IS=124N N=1.5 RS=28.3M BV=60 CJO=2.15N VJ=.8 M=.42 TT=120N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFZ34

*IRFZ44 MCE 4-8-96
*60V  50A .028 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFZ44   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  12.3M
RS  30  3  1.7M
RG  20  2  24.7
CGS  2  3  1.73N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  2.18N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=9.79)
.MODEL DCGD D (CJO=2.18N VJ=.6 M=.68)
.MODEL DSUB D (IS=207N N=1.5 RS=35M BV=60 CJO=3.22N VJ=.8 M=.42 TT=120N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFZ44

*IRFZ46 MCE 4-9-96
*50V  50A .024 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFZ46   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  10.4M
RS  30  3  1.6M
RG  20  2  27.8
CGS  2  3  1.64N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  2.05N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=104K ETA=2M VTO=3 KP=33.2)
.MODEL DCGD D (CJO=2.05N VJ=.6 M=.68)
.MODEL DSUB D (IS=207N N=1.5 RS=35M BV=50 CJO=3.44N VJ=.8 M=.42 TT=66N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFZ46

*IRFZ48 MCE 4-8-96
*60V  50A .018 ohm HEXFET pkg:TO-220 2,1,3
.SUBCKT XIRFZ48   10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  7.55M
RS  30  3  1.45M
RG  20  2  68.4
CGS  2  3  2.21N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  2.44N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=125K ETA=2M VTO=3 KP=22.8)
.MODEL DCGD D (CJO=2.44N VJ=.6 M=.68)
.MODEL DSUB D (IS=207N N=1.5 RS=25M BV=60 CJO=4.77N VJ=.8 M=.42 TT=120N)
.MODEL DLIM D (IS=100U)
.ENDS XIRFZ48

*MP15N06E  MCE  7/6/95
*60V  15A  .08 ohm Power MOSFET
.SUBCKT XMP15N06E 10 20 40 40
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  37M
RS  30  3  3M
RG  20  2  56
CGS  2  3  432P
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  549P
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS(LEVEL=3 THETA=58M VMAX=125K ETA=2M VTO=3.1 KP=6.45)
.MODEL DCGD D(CJO=549P VJ=.6 M=.68)
.MODEL DSUB D(IS=62.2N N=1.5 RS=25.3M BV=60 CJO=838P VJ=.8 M=.42 TT=317N)
.MODEL DLIM D(IS=100U)
.ENDS XMP15N06E

*VN10LF ZETEX  Mosfet Spice Subcircuit  Nodes D G S   Last revision  12/85
*ZTX 60V 150mA pkg:SOT-23
.SUBCKT XVN10LF 3 4 5 5
M1 3 2 5 5 N3306M L=1 W=1
RG 4 2 270
RL 3 5 1.2E8
D1 5 3 N3306D
.MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
+CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1
.MODEL N3306D D IS=5E-12 RS=.768
.ENDS XVN10LF

*ZVN0124 ZETEX  Mosfet Spice Subcircuit  Nodes D G S   Last revision 6/91
*ZTX 240V 160mA pkg:TO-92
.SUBCKT XZVN0124 3 4 5 5
M1 3 2 5 5 N0124 L=1 W=1
RG 4 2 225
RL 3 5 2.4E7
D1 5 3 DN0124
.MODEL N0124 NMOS VTO=1.5512 RS=1.436 RD=9.254 IS=1E-15 KP=1.077
+CGSO=60E-12 CGDO=2E-12 CBD=36E-12 PB=1 LAMBDA=0
.MODEL DN0124 D IS=3.071E-12 N=1.026 RS=0.511
.ENDS XZVN0124

*ZVN2106 ZETEX  Mosfet Spice Subcircuit  Nodes D G S   Last revision  3/86
*ZTX 60V 450mA pkg:TO-92
.SUBCKT XZVN2106 3 4 5 5
M1 3 2 5 5 N2106 L=1 W=1
RG 4 2 120
RL 3 5 1.2E8
D1 5 3 DN2106
.MODEL N2106 NMOS VTO=1.512 RS=0.772 RD=0.449 IS=1E-15 KP=0.653
+CGSO=45E-12 CGDO=15E-12 CBD=63E-12 PB=1 LAMBDA=1.95E-3
.MODEL DN2106 D IS=2.25E-12 RS=0.404
.ENDS XZVN2106

*ZVN2106G ZETEX   Mosfet Spice Subcircuit  Nodes D G S   Last revision  3/86
*ZTX 60V 700mA pkg:SOT-223
.SUBCKT XZVN2106G 3 4 5 5
M1 3 2 5 5 N2106 L=1 W=1
RG 4 2 120
RL 3 5 1.2E8
D1 5 3 DN2106
.MODEL N2106 NMOS VTO=1.512 RS=0.772 RD=0.449 IS=1E-15 KP=0.653
+CGSO=45E-12 CGDO=15E-12 CBD=63E-12 PB=1 LAMBDA=1.95E-E
.MODEL DN2106 D IS=2.25E-12 RS=0.404
.ENDS XZVN2106G

*ZVN3306 ZETEX  Mosfet Spice Subcircuit  Nodes D G S   Last revision  12/85
*ZTX 60V 270mA pkg:TO-92
.SUBCKT XZVN3306 3 4 5 5
M1 3 2 5 5 N3306M L=1 W=1
RG 4 2 270
RL 3 5 1.2E8
D1 5 3 N3306D
.MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
+CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1
.MODEL N3306D D IS=5E-12 RS=.768
.ENDS XZVN3306

*ZVN3306F ZETEX  Mosfet Spice Subcircuit  Nodes D G S   Last revision  12/85
*ZTX 60V 150mA pkg:SOT-23
.SUBCKT XZVN3306F 3 4 5 5
M1 3 2 5 5 N3306M L=1 W=1
RG 4 2 270
RL 3 5 1.2E8
D1 5 3 N3306D
.MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
+CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1
.MODEL N3306D D IS=5E-12 RS=.768
.ENDS XZVN3306F

*ZVN4106  ZETEX  Spice Mosfet Subcircuit  Nodes D G S   Last revision 11/91
*ZTX 60V 200mA pkg:SOT-23
.SUBCKT XZVN4106 3 4 5 5
M1 3 2 5 5 NMOD1 L=1 W=1
RG 4 2 343
RL 3 5 6E6
D1 5 3 DIODE1
.MODEL NMOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296
+CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6
.MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222
.ENDS XZVN4106

*ZVN4210  ZETEX  Spice Mosfet Subcircuit  Nodes D G S   Last revision 11/91
*ZTX
.SUBCKT XZVN4210 3 4 5 5
M1 3 2 5 5 NMOD1 L=1 W=1
RG 4 2 401.5
RL 3 5 1E7
D1 5 3 DIODE1
.MODEL NMOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082
+CGSO=61.5P CGDO=3.5P CBD=108P PB=1 LAMBDA=0
.MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166
.ENDS XZVN4210

*ZVN4310  ZETEX   Spice model  Nodes D G S   Last revision 6/92
*ZTX
.SUBCKT XZVN4310 30 40 50 50
M1 30 20 50 50 NMOD1 L=1 W=1
RG 40 20 82
RL 30 50 1E7
D1 50 30 DIODE1
.MODEL NMOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02
+CGSO=200E-12 CGDO=13.5E-12 CBD=288E-12 PB=1 LAMBDA=0
.MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844
.ENDS XZVN4310

*   Copyright notice for all models labeled "ZETEX":
*
*                          (C)  1992 ZETEX PLC
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex PLC ("Zetex").  They  are  supplied  free of charge by
*   Zetex for the purpose of research and design and may be used or
*   copied intact  (including this notice)  for  that purpose only.
*   All other rights are reserved. The models are believed accurate
*   but  no condition  or warranty  as to their  merchantability or
*   fitness for purpose is given and no liability in respect of any
*   use is accepted by Zetex PLC, its distributors or agents.
*
*
*   Zetex PLC, Fields New Road, Chadderton, Oldham  OL9 8NP  U.K.